In this paper. we report the molecular beam epitaxy-grown InGaN-quantum disks embedded within selective area epitaxy of GaN nanowires with both Ga- and N-polarities. A detailed comparative analysis of these two types of nanostructures is also provided. Compared to Ga-polar nanowires. https://safeersappliancers.shop/product-category/rangemaster-lkd110dffsl-leckford-deluxe-110cm-dual-fuel-range-cooker/